| PART |
Description |
Maker |
| MAX306C_D MAX30610 MAX307EUI-T MAX306EUI |
Precision, 16-Channel/Dual 8-Channel, High-Performance, CMOS Analog Multiplexers 8-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDSO28
|
Maxim Integrated Products, Inc.
|
| HCPL0500 HCPL0501 HCPL0530 HCPL0531 HCPL0534 HCPL0 |
Single channel high speed transistor optocoupler.
HIGH SPEED TRANSISTOR OPTOCOUPLERS
8-Pin SOIC Single-Channel High Speed Transistor 8-PIN, Output Optocoupler - No Base Connection
8-Pin SOIC Single-Channel High Speed Transistor Output Optocoupler
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 1kV/us
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us
8-Pin SOIC 1 Mbit/s Single-Channel High Speed Transistor Output Optocoupler
|
FAIRCHILD[Fairchild Semiconductor]
|
| SG2644 SG2644DW SG2644J SG2644M SG2644R SG2644T SG |
Half Bridge Driver, Non-Inverting
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, MBFM9
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP14
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP8
EXTRACTION TOOL 566 SERIES
From old datasheet system
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation
Toshiba Semiconductor
|
| PS2532L-1 PS2532L-1-V-E3 PS2532-1-V-A PS2532L-1-E3 |
1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
2 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES
|
Duracell
CEL[California Eastern Labs]
|
| HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| BTS436L2 BTS436L2G BTS436L2S Q67060-S6111-A4 Q6706 |
Smart High Side Switches - 4,75-41V, 38mΩ 9,8A TO 220
Smart High-Side Power Switch One Channel: 38mз Status Feedback
Smart High-Side Power Switch One Channel: 38m蟹 Status Feedback
Smart High-Side Power Switch One Channel: 38m Status Feedback
Smart High-Side Power Switch One Channel: 38m?/a> Status Feedback
|
INFINEON[Infineon Technologies AG]
|
| GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http://
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
